SI7388DP-T1-GE3
MOSFET N-CH 30V 12A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix N-Channel TrenchFET® MOSFET, part number SI7388DP-T1-GE3, is a 30V device in a PowerPAK® SO-8 package. This surface mount component offers a continuous drain current of 12A (Ta) at 25°C with a maximum power dissipation of 1.9W (Ta). Key electrical specifications include a low Rds(on) of 7mOhm at 19A and 10V, a gate charge of 24 nC at 5V, and a threshold voltage (Vgs(th)) of 1.6V at 250µA. It supports drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±20V. The operating temperature range is -55°C to 150°C (TJ). This component is commonly found in power management, automotive, and industrial applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 5 V |
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