SI7384DP-T1-GE3
MOSFET N-CH 30V 11A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7384DP-T1-GE3 is an N-channel MOSFET designed for demanding power applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 11A at 25°C ambient. Its low Rds(on) of 8.5mOhm at 18A and 10V gate drive ensures efficient power transfer with minimal conduction losses. The optimized gate charge of 18nC at 4.5V facilitates high-speed switching. Housed in a PowerPAK® SO-8 surface-mount package, it offers superior thermal performance with a maximum power dissipation of 1.8W (Ta). The operating temperature range extends from -55°C to 150°C (TJ). This component finds application in automotive, industrial, and consumer electronics where high efficiency and compact form factors are critical.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
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