SI7384DP-T1-E3
MOSFET N-CH 30V 11A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix presents the SI7384DP-T1-E3, an N-Channel MOSFET from the TrenchFET® series. This surface-mount component, packaged in a PowerPAK® SO-8, offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C. Key specifications include a maximum on-resistance (Rds On) of 8.5mOhm at 18A and 10V, with a gate charge (Qg) of 18nC at 4.5V. The device operates across a temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±20V. With a maximum power dissipation of 1.8W (Ta), this MOSFET is suitable for applications requiring efficient power switching in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
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