SI7382DP-T1-GE3
MOSFET N-CH 30V 14A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7382DP-T1-GE3 is an N-Channel power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 14A at 25°C ambient temperature. The highly optimized TrenchFET® technology delivers ultra-low Rds(on) of 4.7mOhm at 24A and 10V Vgs, minimizing conduction losses. It is packaged in the thermally efficient PowerPAK® SO-8 surface-mount package, supporting up to 1.8W power dissipation. Key parameters include a gate charge of 40nC at 4.5V Vgs and a threshold voltage of 3V at 250µA. Operating temperature range is from -55°C to 150°C. This component is suitable for use in power management, DC-DC converters, and battery-powered systems within the computing, industrial, and consumer electronics sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
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