SI7380ADP-T1-GE3
MOSFET N-CH 30V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7380ADP-T1-GE3 is an N-Channel TrenchFET® Series power MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 40A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 3mOhm maximum at 20A and 10V Vgs, facilitating minimal conduction losses. With a maximum power dissipation of 83W at 25°C (Tc), it is suitable for demanding thermal environments. The SI7380ADP-T1-GE3 is packaged in a PowerPAK® SO-8 surface mount configuration, enabling compact board designs. Key electrical characteristics include a gate charge (Qg) of 185 nC maximum at 10V Vgs and input capacitance (Ciss) of 7785 pF maximum at 15V Vds. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics power management solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 185 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7785 pF @ 15 V |
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