SI7368DP-T1-E3
MOSFET N-CH 20V 13A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI7368DP-T1-E3 is a 20V N-Channel Power MOSFET designed for efficient power management applications. This device features a low Rds(on) of 5.5mOhm at 20A and 10V Vgs, ensuring minimal conduction losses. The PowerPAK® SO-8 package provides excellent thermal performance with a power dissipation of 1.7W. With a continuous drain current of 13A (Ta) and a low gate charge of 25nC at 4.5V, the SI7368DP-T1-E3 offers fast switching capabilities. It operates across a wide temperature range of -55°C to 150°C, making it suitable for demanding automotive and industrial environments. The device supports gate drive voltages from 4.5V to 10V and has a maximum Vgs of ±16V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V |
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