SI7366DP-T1-GE3
MOSFET N-CH 20V 13A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® series N-Channel Power MOSFET, part number SI7366DP-T1-GE3. This device features a 20V drain-source breakdown voltage and supports a continuous drain current of 13A at 25°C ambient. Optimized for low on-resistance, it exhibits a maximum Rds(on) of 5.5mOhm at 20A and 10V gate drive. The N-Channel MOSFET utilizes advanced trench technology and is housed in a PowerPAK® SO-8 package for efficient thermal management and high power density. Key electrical characteristics include a gate charge of 25nC at 4.5V and a gate-source threshold voltage of 3V at 250µA. Operating temperature range is -55°C to 150°C. Applications include power management, battery-powered devices, and DC-DC converters in industrial and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V |
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