SI7358ADP-T1-GE3
MOSFET N-CH 30V 14A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7358ADP-T1-GE3 is an N-Channel MOSFET designed for efficient power management. This component features a 30 V drain-source voltage rating and a continuous drain current capability of 14 A at 25°C ambient. The low on-resistance of 4.2 mOhm at 23 A and 10 V gate drive is achieved through its TrenchFET® technology. With a maximum gate charge of 40 nC at 4.5 V, it offers optimized switching performance. The device is housed in a PowerPAK® SO-8 surface-mount package, ensuring excellent thermal dissipation with a maximum power dissipation of 1.9 W at 25°C ambient. It operates across a wide temperature range of -55°C to 150°C. Typical applications include power supplies, battery management, and motor control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4650 pF @ 15 V |
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