SI7356ADP-T1-E3
MOSFET N-CH 30V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI7356ADP-T1-E3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source voltage and a continuous drain current capability of 40A at 25°C (Tc). With a low on-resistance of 3mOhm maximum at 20A and 10V Vgs, it minimizes conduction losses. The MOSFET utilizes Vishay's TrenchFET® technology in a PowerPAK® SO-8 package, offering excellent thermal performance with a maximum power dissipation of 83W at 25°C (Tc). Key parameters include a gate charge (Qg) of 145 nC at 10V and input capacitance (Ciss) of 6215 pF at 15V. This component is suitable for power management, automotive, and industrial applications requiring robust power handling and low power losses. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6215 pF @ 15 V |
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