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SI7326DN-T1-GE3

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SI7326DN-T1-GE3

MOSFET N-CH 30V 6.5A PPAK 1212-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI7326DN-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V Drain-to-Source voltage (Vds) and a continuous drain current (Id) of 6.5A at 25°C, with a maximum power dissipation of 1.5W (Ta). The low on-resistance of 19.5mOhm at 10A and 10V gate-to-source voltage (Vgs) ensures efficient power transfer. It operates with a gate drive voltage range from 4.5V to 10V and has a maximum gate-to-source voltage of ±25V. The threshold voltage (Vgs(th)) is 1.8V at 250µA. Key parameters include a maximum gate charge (Qg) of 13nC at 5V. The component is housed in a surface-mount PowerPAK® 1212-8 package and is supplied on a tape and reel. This MOSFET technology is suitable for automotive, industrial, and consumer electronics power management solutions. It operates within a temperature range of -55°C to 150°C (TJ).

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® 1212-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
Rds On (Max) @ Id, Vgs19.5mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Vgs(th) (Max) @ Id1.8V @ 250µA
Supplier Device PackagePowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 5 V

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