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SI7322DN-T1-GE3

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SI7322DN-T1-GE3

MOSFET N-CH 100V 18A PPAK1212-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI7322DN-T1-GE3 is a 100V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a low on-resistance of 58mOhm maximum at 5.5A and 10V Vgs, minimizing conduction losses. With a continuous drain current of 18A (Tc) and a high power dissipation capability of 52W (Tc), it is suitable for demanding power management tasks. The device is packaged in the compact PowerPAK® 1212-8 surface-mount configuration for optimal thermal performance and board space utilization. Key electrical characteristics include a gate charge (Qg) of 20 nC maximum at 10V and an input capacitance (Ciss) of 750 pF maximum at 50V. This MOSFET utilizes Vishay's advanced trench technology for improved performance and is commonly found in industrial and automotive power systems. It operates across a wide temperature range of -55°C to 150°C.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® 1212-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Rds On (Max) @ Id, Vgs58mOhm @ 5.5A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id4.4V @ 250µA
Supplier Device PackagePowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds750 pF @ 50 V

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