SI7322DN-T1-E3
MOSFET N-CH 100V 18A PPAK 1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI7322DN-T1-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current capability of 18A. The device is housed in a PowerPAK® 1212-8 surface mount package, offering efficient thermal performance with a maximum power dissipation of 3.8W (TA) and 52W (TC). Key electrical characteristics include a maximum On-Resistance (Rds On) of 58mOhm at 5.5A and 10V gate drive, a gate charge (Qg) of 20nC at 10V, and an input capacitance (Ciss) of 750pF at 50V. It operates across a wide temperature range of -55°C to 150°C. This MOSFET is suitable for applications in power management, automotive systems, and industrial equipment.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 4.4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 50 V |
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