SI7322ADN-T1-GE3
MOSFET N-CH 100V 15.1A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix ThunderFET® MOSFET N-Channel, part number SI7322ADN-T1-GE3. This device features a 100V drain-to-source voltage and a continuous drain current of 15.1A at 25°C (Tc). The N-Channel MOSFET is engineered with a typical on-resistance of 57mOhm at 5.5A and 10V gate drive. Key parameters include a low gate charge of 13nC at 10V and an input capacitance of 360pF at 50V. The component offers a maximum power dissipation of 26W (Tc) and is housed in a surface mount PowerPAK® 1212-8 package. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in automotive, industrial, and power management systems.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 26W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 50 V |
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