SI7317DN-T1-GE3
MOSFET P-CH 150V 2.8A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7317DN-T1-GE3 is a P-channel Power MOSFET designed for demanding applications. This component features a 150V drain-to-source voltage (Vdss) and a continuous drain current of 2.8A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.2 Ohms at 500mA and 10V, it offers efficient power handling. The device is housed in a PowerPAK® 1212-8 surface-mount package, enabling high power density. Key electrical characteristics include a gate charge (Qg) of 9.8 nC (max) at 10V and input capacitance (Ciss) of 365 pF (max) at 75V. It operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in automotive, industrial, and power supply applications requiring robust switching performance.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 19.8W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 75 V |
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