SI7308DN-T1-GE3
MOSFET N-CH 60V 6A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix TrenchFET® SI7308DN-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. Featuring a 60V drain-source voltage (Vdss) and capable of a continuous drain current of 6A at 25°C (Tc), this component offers low on-resistance of 58mOhm at 5.4A and 10V (Vgs). Its high switching efficiency is supported by a gate charge (Qg) of 20 nC (max) at 10V and an input capacitance (Ciss) of 665 pF (max) at 15V. The device operates across a wide temperature range of -55°C to 150°C (TJ) and dissipates power up to 19.8W (Tc) or 3.2W (Ta). Packaged in a surface-mount PowerPAK® 1212-8 and supplied on tape and reel, the SI7308DN-T1-GE3 is suitable for power management, automotive, and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 5.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 19.8W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 665 pF @ 15 V |
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