SI7308DN-T1-E3
MOSFET N-CH 60V 6A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7308DN-T1-E3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 60V drain-source voltage and a continuous drain current of 6A at 25°C (Tc). With a low on-resistance of 58mOhm maximum at 5.4A and 10V, it minimizes conduction losses. The device is housed in a PowerPAK® 1212-8 surface mount package, offering excellent thermal performance with a maximum power dissipation of 19.8W at 25°C (Tc). Key parameters include a gate charge (Qg) of 20 nC maximum at 10V and input capacitance (Ciss) of 665 pF maximum at 15V, suitable for demanding switching frequencies. The operating temperature range is -55°C to 150°C. This MOSFET finds utility in various industrial and consumer electronics, including power supplies and motor control.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 5.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 19.8W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 665 pF @ 15 V |
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