SI7302DN-T1-GE3
MOSFET N-CH 220V 8.4A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SI7302DN-T1-GE3, offers a 220V drain-to-source voltage (Vdss) and 8.4A continuous drain current at 25°C (Tc). This device features a low on-resistance of 320mOhm maximum at 2.3A and 10V, facilitated by its N-channel TrenchFET technology. The PowerPAK® 1212-8 surface mount package provides efficient thermal dissipation, with a maximum power dissipation of 52W at 25°C (Tc). Key electrical parameters include a gate charge (Qg) of 21 nC maximum at 10V and input capacitance (Ciss) of 645 pF maximum at 15V. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in industrial power, automotive, and consumer electronics requiring robust power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 220 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 645 pF @ 15 V |
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