SI7196DP-T1-GE3
MOSFET N-CH 30V 16A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix WFET® N-Channel MOSFET, part number SI7196DP-T1-GE3, offers a 30V drain-to-source voltage and a continuous drain current of 16A at 25°C (Tc). This device features a low on-resistance of 11mOhm maximum at 12A and 10V Vgs. The PowerPAK® SO-8 package provides robust thermal performance with a maximum power dissipation of 5W (Ta) and 41.6W (Tc). Key electrical parameters include a gate charge of 38 nC maximum at 10V Vgs and input capacitance of 1577 pF maximum at 15V Vds. Designed for surface mount applications, this technology is suitable for power management in automotive and industrial sectors. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: WFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 41.6W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1577 pF @ 15 V |
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