SI7196DP-T1-E3
MOSFET N-CH 30V 16A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix WFET® SI7196DP-T1-E3 is an N-Channel MOSFET designed for demanding power applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current capability of 16A at 25°C (Tc). The low on-resistance of 11mOhm is achieved at 12A and 10V Vgs. It offers a maximum power dissipation of 5W (Ta) and 41.6W (Tc). The device is housed in a PowerPAK® SO-8 surface mount package, facilitating high-density board designs. Key characteristics include a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 1577 pF at 15V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is utilized in industrial and automotive sectors.
Additional Information
Series: WFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 41.6W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1577 pF @ 15 V |