SI7194DP-T1-GE3
MOSFET N-CH 25V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7194DP-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This component features a 25V drain-source voltage (Vdss) and a continuous drain current (Id) of 60A at 25°C (Tc). With a low on-resistance (Rds On) of 2mOhm at 20A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 83W at 25°C (Tc) and 5.4W at 25°C (Ta). Key electrical parameters include a gate charge (Qg) of 145 nC (max) at 10V and input capacitance (Ciss) of 6590 pF (max) at 15V. The SI7194DP-T1-GE3 is housed in a PowerPAK® SO-8 surface mount package, suitable for high-density board designs. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is widely utilized in power management, automotive systems, and industrial power conversion.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6590 pF @ 15 V |