SI7190DP-T1-GE3
MOSFET N-CH 250V 18.4A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI7190DP-T1-GE3 is an N-Channel Power MOSFET featuring a 250V drain-source breakdown voltage and a continuous drain current capability of 18.4A (Tc). This TrenchFET® series device is housed in a PowerPAK® SO-8 surface mount package, offering a low on-resistance of 118mOhm maximum at 4.4A and 10V Vgs. Key electrical characteristics include a maximum gate charge (Qg) of 72 nC at 10V and an input capacitance (Ciss) of 2214 pF maximum at 125V. The device supports a wide operating temperature range from -55°C to 150°C (TJ) and has a maximum power dissipation of 96W (Tc). This component is suitable for applications in power supplies, motor control, and industrial automation. The packaging format is Tape & Reel (TR).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 118mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 96W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2214 pF @ 125 V |
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