SI7190ADP-T1-RE3
MOSFET N-CH 250V 4.3A/14.4A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix ThunderFET® N-Channel MOSFET, part number SI7190ADP-T1-RE3, is a 250V device in a PowerPAK® SO-8 package. This MOSFET offers a continuous drain current of 4.3A at 25°C ambient and 14.4A at 25°C case temperature, with a maximum power dissipation of 5W (ambient) and 56.8W (case). Key electrical characteristics include a maximum Rds(On) of 102mOhm at 4.3A and 10V Vgs. Gate charge (Qg) is 22.4 nC maximum at 10V Vgs, and input capacitance (Ciss) is 860 pF maximum at 100V Vds. Designed for robust performance, it operates within a temperature range of -55°C to 150°C. This component is suitable for applications in power supply, industrial, and automotive sectors.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta), 14.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 102mOhm @ 4.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 56.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 100 V |
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