SI7186DP-T1-E3
MOSFET N-CH 80V 32A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7186DP-T1-E3 is an N-Channel power MOSFET with a Drain-Source voltage (Vdss) of 80V. This device features a low on-resistance (Rds(on)) of 12.5mOhm at 10A and 10V gate drive, and a continuous drain current (Id) of 32A at 25°C (Tc). The maximum power dissipation is rated at 64W (Tc) and 5.2W (Ta). Key electrical characteristics include a gate charge (Qg) of 70 nC at 10V and input capacitance (Ciss) of 2840 pF at 40V. The SI7186DP-T1-E3 is housed in a PowerPAK® SO-8 surface-mount package and operates within a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power management, automotive systems, and industrial motor control.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 64W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 40 V |