SI7178DP-T1-GE3
MOSFET N-CH 100V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI7178DP-T1-GE3 is an N-Channel TrenchFET® power MOSFET with a Drain-Source Voltage (Vdss) of 100V. This component offers a continuous drain current of 60A at 25°C (Tc) and a maximum on-resistance (Rds On) of 14mOhm at 10A, 10V. The device is housed in a PowerPAK® SO-8 surface mount package, featuring low thermal resistance for efficient heat dissipation, rated at 104W (Tc). Key electrical parameters include a gate charge (Qg) of 72 nC (max) at 10V and input capacitance (Ciss) of 2870 pF (max) at 50V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for high-efficiency power conversion applications across various industries including computing, industrial, and automotive.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2870 pF @ 50 V |
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