SI7172ADP-T1-RE3
MOSFET N-CH 200V PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7172ADP-T1-RE3 is an N-Channel Power MOSFET designed for demanding applications. This component features a 200V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 5.3A at ambient temperature (Ta) and 17.2A at case temperature (Tc). The Rds On is specified at a maximum of 50mOhm at 10A and 10V gate-source voltage. The device utilizes Vishay's PowerPAK® SO-8 surface mount package, offering excellent thermal performance. Key electrical parameters include a maximum gate charge (Qg) of 19.5 nC at 10V and input capacitance (Ciss) of 1110 pF at 100V. The maximum gate-source voltage is ±20V, with a threshold voltage (Vgs(th)) of 3.1V at 250µA. This MOSFET is suitable for use in power supply, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 125°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta), 17.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.1V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 100 V |
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