SI7170DP-T1-GE3
MOSFET N-CH 30V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI7170DP-T1-GE3 is an N-Channel MOSFET designed for demanding power conversion applications. This component offers a 30V drain-source voltage and a continuous drain current capability of 40A at 25°C (Tc). Key electrical characteristics include a maximum on-resistance of 3.4mOhm at 15A and 10V, and a gate charge of 100 nC at 10V. The input capacitance (Ciss) is specified at 4355 pF maximum at 15V. Featuring a PowerPAK® SO-8 surface-mount package, this device supports high power dissipation, rated at 5W (Ta) and 48W (Tc). Operating temperature range is from -55°C to 150°C. The SI7170DP-T1-GE3 is suitable for use in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4355 pF @ 15 V |