SI7164DP-T1-GE3
MOSFET N-CH 60V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7164DP-T1-GE3 is an N-Channel Power MOSFET designed for demanding power management applications. This component features a 60V drain-source voltage rating and a continuous drain current capability of 60A at 25°C (Tc). With a low on-resistance of 6.25mOhm at 10A and 10V, the SI7164DP-T1-GE3 minimizes conduction losses. The device is housed in a PowerPAK® SO-8 package, enabling efficient thermal dissipation with a maximum power dissipation of 104W (Tc). Key electrical characteristics include a gate charge (Qg) of 75 nC at 10V and input capacitance (Ciss) of 2830 pF at 30V. Operating across a temperature range of -55°C to 150°C, this Vishay Siliconix MOSFET is suitable for use in automotive, industrial, and computing sectors. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.25mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2830 pF @ 30 V |
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