SI7156DP-T1-GE3
MOSFET N-CH 40V 50A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7156DP-T1-GE3 is a TrenchFET® N-Channel MOSFET designed for demanding power applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C (Tc). With a maximum Rds(on) of 3.5mOhm at 20A and 10V, it offers excellent conduction efficiency. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Key electrical characteristics include a maximum gate charge (Qg) of 155nC and input capacitance (Ciss) of 6900pF. The SI7156DP-T1-GE3 is housed in a PowerPAK® SO-8 surface-mount package, enabling high power dissipation of up to 83W (Tc). Operating temperature range is -55°C to 150°C. This component is suitable for use in automotive, industrial, and consumer electronics where efficient power switching is critical.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 20 V |
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