SI7156DP-T1-E3
MOSFET N-CH 40V 50A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7156DP-T1-E3 is an N-Channel MOSFET featuring TrenchFET® technology. This component offers a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 3.5mOhm at 20A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 155 nC (max) at 10V and an input capacitance (Ciss) of 6900 pF (max) at 20V. The power dissipation is rated at 5.4W (Ta) and 83W (Tc). Packaged in a PowerPAK® SO-8, this surface-mount device operates across a temperature range of -55°C to 150°C (TJ). The SI7156DP-T1-E3 is suitable for applications in power management, automotive, and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 20 V |