SI7138DP-T1-GE3
MOSFET N-CH 60V 30A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel Power MOSFET, part number SI7138DP-T1-GE3. This device features a 60V drain-source breakdown voltage and a continuous drain current rating of 30A at 25°C (Tc). The low on-resistance is specified as a maximum of 7.8mOhm at 19.7A and 10V Vgs. Gate charge (Qg) is 135 nC maximum at 10V, and input capacitance (Ciss) is 6900 pF maximum at 30V Vds.
Designed for surface mounting in the PowerPAK® SO-8 package, this MOSFET offers a maximum power dissipation of 96W (Tc) and 5.4W (Ta). It operates across a temperature range of -55°C to 150°C. Key applications include power management, automotive systems, and industrial power control. It supports drive voltages from 6V to 10V and has a maximum gate-source voltage of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 19.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 96W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 30 V |