SI7138DP-T1-E3
MOSFET N-CH 60V 30A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7138DP-T1-E3 is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) rating of 30A at 25°C (Tc). With a low on-resistance (Rds On) of 7.8mOhm maximum at 19.7A and 10V gate-source voltage, it minimizes conduction losses. The device is housed in a PowerPAK® SO-8 surface mount package, facilitating efficient thermal management with a maximum power dissipation of 96W at 25°C (Tc). Key parameters include a gate charge (Qg) of 135 nC maximum at 10V and input capacitance (Ciss) of 6900 pF maximum at 30V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for use in power management, automotive, and industrial equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 19.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 96W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 30 V |
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