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SI7138DP-T1-E3

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SI7138DP-T1-E3

MOSFET N-CH 60V 30A PPAK SO-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SI7138DP-T1-E3 is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) rating of 30A at 25°C (Tc). With a low on-resistance (Rds On) of 7.8mOhm maximum at 19.7A and 10V gate-source voltage, it minimizes conduction losses. The device is housed in a PowerPAK® SO-8 surface mount package, facilitating efficient thermal management with a maximum power dissipation of 96W at 25°C (Tc). Key parameters include a gate charge (Qg) of 135 nC maximum at 10V and input capacitance (Ciss) of 6900 pF maximum at 30V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for use in power management, automotive, and industrial equipment.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs7.8mOhm @ 19.7A, 10V
FET Feature-
Power Dissipation (Max)5.4W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6900 pF @ 30 V

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