SI7136DP-T1-GE3
MOSFET N-CH 20V 30A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7136DP-T1-GE3 is a 20V N-Channel Power MOSFET in a PowerPAK® SO-8 package. This device offers a continuous drain current of 30A at 25°C (Tc) and a maximum Rds(on) of 3.2mOhm at 20A and 10V gate drive. With a Vgs(th) of 3V, it is suitable for gate drive voltages from 4.5V to 10V. Key parameters include a gate charge (Qg) of 78 nC and input capacitance (Ciss) of 3380 pF at 10V Vds. The MOSFET supports a maximum power dissipation of 5W (Ta) and 39W (Tc). Operating across a temperature range of -55°C to 150°C, this component is typically found in applications such as power management, automotive electronics, and industrial systems. It is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 39W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3380 pF @ 10 V |