SI7136DP-T1-E3
MOSFET N-CH 20V 30A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7136DP-T1-E3 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 20V drain-source voltage rating and a continuous drain current capability of 30A at 25°C (Tc). The low on-resistance of 3.2 mOhm at 20A and 10V gate drive voltage, combined with the TrenchFET® technology, minimizes conduction losses. The device offers a maximum gate charge of 78 nC at 10V and an input capacitance of 3380 pF at 10V (Vds). With a maximum power dissipation of 39W at 25°C (Tc), it is suitable for demanding thermal environments. The PowerPAK® SO-8 package provides excellent thermal performance and a compact footprint, ideal for surface mounting. It operates across a temperature range of -55°C to 150°C (TJ). This component is frequently utilized in power management, consumer electronics, and automotive systems requiring robust and efficient switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 39W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3380 pF @ 10 V |
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