SI7120DN-T1-GE3
MOSFET N-CH 60V 6.3A 1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number SI7120DN-T1-GE3, offers a 60V drain-source voltage and a continuous drain current of 6.3A (Ta) at 25°C. This surface mount device features a low Rds(on) of 19mOhm at 10A, 10V, and a gate charge of 45nC (Max) at 10V. The PowerPAK® 1212-8 package provides efficient thermal performance. This component is suitable for applications in power management and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 10A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
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