SI7120DN-T1-E3
MOSFET N-CH 60V 6.3A 1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7120DN-T1-E3 is an N-Channel Power MOSFET designed for efficient power management. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 6.3A at 25°C ambient temperature. The low on-resistance, specified at 19mOhm maximum at 10A and 10V gate-source voltage, minimizes conduction losses. With a gate charge of 45 nC maximum at 10V, it supports high switching frequencies. The PowerPAK® 1212-8 surface mount package offers excellent thermal performance and a compact footprint, suitable for demanding applications in industrial and automotive sectors. The threshold voltage (Vgs(th)) is a maximum of 3.5V at 250µA. This component is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 10A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
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