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SI7120DN-T1-E3

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SI7120DN-T1-E3

MOSFET N-CH 60V 6.3A 1212-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SI7120DN-T1-E3 is an N-Channel Power MOSFET designed for efficient power management. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 6.3A at 25°C ambient temperature. The low on-resistance, specified at 19mOhm maximum at 10A and 10V gate-source voltage, minimizes conduction losses. With a gate charge of 45 nC maximum at 10V, it supports high switching frequencies. The PowerPAK® 1212-8 surface mount package offers excellent thermal performance and a compact footprint, suitable for demanding applications in industrial and automotive sectors. The threshold voltage (Vgs(th)) is a maximum of 3.5V at 250µA. This component is supplied in Cut Tape (CT) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)
Technical Details:
PackagingCut Tape (CT)
Package / CasePowerPAK® 1212-8
Mounting TypeSurface Mount
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.3A (Ta)
Rds On (Max) @ Id, Vgs19mOhm @ 10A, 10V
FET Feature-
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device PackagePowerPAK® 1212-8
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V

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