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SI7120ADN-T1-GE3

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SI7120ADN-T1-GE3

MOSFET N-CH 60V 6A PPAK1212-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI7120ADN-T1-GE3 is a 60V N-Channel MOSFET. This device features a low Rds(on) of 21mOhm at 9.5A and 10V Vgs, enabling high efficiency in power conversion applications. The continuous drain current is rated at 6A (Ta) with a maximum power dissipation of 1.5W (Ta). It is supplied in a PowerPAK® 1212-8 surface mount package on tape and reel. Key electrical characteristics include a gate charge of 45 nC @ 10 V and a threshold voltage of 3V @ 250µA. The device operates across a wide temperature range of -55°C to 150°C (TJ). This power MOSFET is suitable for use in power management systems, automotive electronics, and industrial automation.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® 1212-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Rds On (Max) @ Id, Vgs21mOhm @ 9.5A, 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V

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