SI7115DN-T1-E3
MOSFET P-CH 150V 8.9A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI7115DN-T1-E3 is a P-Channel Power MOSFET designed for demanding applications. This surface mount device features a 150V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 8.9A at 25°C (Tc). With a maximum power dissipation of 52W (Tc), it offers efficient thermal performance. The device boasts a low on-resistance (Rds On) of 295mOhm at 4A and 10V. Key parameters include a gate charge (Qg) of 42nC at 10V and input capacitance (Ciss) of 1190pF at 50V. The SI7115DN-T1-E3 is housed in a PowerPAK® 1212-8 package, suitable for high-density board designs. Operating temperature ranges from -50°C to 150°C (TJ). This component is frequently utilized in power management, automotive systems, and industrial power supplies.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 295mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 50 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
