SI7113DN-T1-E3
MOSFET P-CH 100V 13.2A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI7113DN-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for demanding applications. This device features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 13.2A at 25°C (Tc). The Rds(on) is specified at a maximum of 134mOhm at 4A and 10V gate drive. With a maximum power dissipation of 52W (Tc), this P-Channel MOSFET utilizes a surface mount PowerPAK® 1212-8 package. Key electrical parameters include a gate charge (Qg) of 55 nC at 10V and input capacitance (Ciss) of 1480 pF at 50V. The operating temperature range is from -50°C to 150°C. This component is suitable for use in power management and switching applications across various industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 134mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1480 pF @ 50 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
