SI7113ADN-T1-GE3
MOSFET P-CH 100V 10.8A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7113ADN-T1-GE3 is a P-Channel TrenchFET® power MOSFET designed for high-efficiency power management applications. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 10.8A at 25°C (Tc), with a maximum power dissipation of 27.8W (Tc). The surface mountable PowerPAK® 1212-8 package offers excellent thermal performance. Key electrical characteristics include a maximum Rds(on) of 132mOhm at 3.8A and 10V, and a gate charge (Qg) of 16.5 nC at 10V. It operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for use in automotive, industrial, and consumer electronics sectors requiring robust power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 132mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 515 pF @ 50 V |
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