SI7107DN-T1-GE3
MOSFET P-CH 20V 9.8A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7107DN-T1-GE3 is a P-Channel Power MOSFET designed for high-efficiency power management applications. This device features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 9.8 A at 25°C, with a maximum power dissipation of 1.5 W. The low on-resistance is specified as 10.8 mOhm at 15.3 A and 4.5 V Vgs. It utilizes a surface mount PowerPAK® 1212-8 package, facilitating compact board layouts. Drive voltages range from 1.8 V to 4.5 V, with a maximum Gate Charge (Qg) of 44 nC at 4.5 V. This component is suitable for use in consumer electronics, industrial automation, and automotive systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.8mOhm @ 15.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 450µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
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