SI7102DN-T1-GE3
MOSFET N-CH 12V 35A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® N-Channel MOSFET, part number SI7102DN-T1-GE3, offers a 12V drain-source voltage. This device features a low on-resistance of 3.8mOhm at 15A and 4.5V Vgs, ensuring efficient power delivery. The continuous drain current is rated at 35A (Tc), with a maximum power dissipation of 52W (Tc) and 3.8W (Ta). Designed for surface mounting in the PowerPAK® 1212-8 package, this component is suitable for applications requiring high current density and thermal performance. Key electrical characteristics include a gate charge of 110 nC at 8V and input capacitance of 3720 pF at 6V. Operating across a temperature range of -50°C to 150°C (TJ), the SI7102DN-T1-GE3 is utilized in power management, consumer electronics, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3720 pF @ 6 V |