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SI7102DN-T1-E3

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SI7102DN-T1-E3

MOSFET N-CH 12V 35A PPAK 1212-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI7102DN-T1-E3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 12V drain-source voltage (Vdss) and a continuous drain current capability of 35A (Tc). The device offers a low on-resistance of 3.8mOhm at 15A and 4.5V gate-source voltage (Vgs), facilitating minimal conduction losses. With a maximum power dissipation of 52W (Tc), it is suitable for demanding thermal environments. The SI7102DN-T1-E3 utilizes the PowerPAK® 1212-8 surface mount package, providing excellent thermal performance and a compact footprint. Key electrical characteristics include a maximum gate charge (Qg) of 110 nC at 8V Vgs and input capacitance (Ciss) of 3720 pF at 6V Vds. This MOSFET is employed in various industries, including automotive, consumer electronics, and industrial power management.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® 1212-8
Mounting TypeSurface Mount
Operating Temperature-50°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs3.8mOhm @ 15A, 4.5V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackagePowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds3720 pF @ 6 V

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Vishay Siliconix - SI7102DN-T1-E3 - Microchip USA