SI7100DN-T1-GE3
MOSFET N-CH 8V 35A PPAK 1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7100DN-T1-GE3 is an N-Channel MOSFET designed for high-efficiency power switching applications. This device features an 8V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 35A at 25°C (Tc). Its low on-resistance (Rds On) of 3.5mOhm at 15A and 4.5V Vgs, combined with a gate charge (Qg) of 105 nC, ensures minimal conduction and switching losses. With a maximum power dissipation of 52W at 25°C (Tc), it is suitable for demanding thermal environments. The device utilizes a PowerPAK® 1212-8 surface-mount package and operates across a temperature range of -50°C to 150°C. This component is commonly found in power management solutions for consumer electronics, computing, and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3810 pF @ 4 V |