SI7100DN-T1-E3
MOSFET N-CH 8V 35A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7100DN-T1-E3 is an N-Channel TrenchFET® power MOSFET designed for high-efficiency power management applications. This component features a low drain-to-source voltage (Vdss) of 8V and supports a continuous drain current (Id) of 35A at 25°C (Tc). Its exceptionally low on-resistance (Rds On) of 3.5mOhm at 15A and 4.5V (Vgs) minimizes conduction losses. The device is housed in a PowerPAK® 1212-8 surface-mount package, offering excellent thermal performance with a maximum power dissipation of 52W (Tc). Key electrical characteristics include a gate charge (Qg) of 105 nC at 8V and input capacitance (Ciss) of 3810 pF at 4V. The operating temperature range is -50°C to 150°C (TJ). This MOSFET is suitable for demanding applications in consumer electronics and industrial power systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3810 pF @ 4 V |
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