SI6473DQ-T1-GE3
MOSFET P-CH 20V 6.2A 8TSSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI6473DQ-T1-GE3 is a P-Channel TrenchFET® MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 6.2A at 25°C (Ta), with a maximum power dissipation of 1.08W (Ta). It offers a low on-resistance of 12.5mOhm at 9.5A and 4.5V, with drive voltages ranging from 1.8V to 4.5V. The device's gate charge (Qg) is a maximum of 70 nC at 5V. The SI6473DQ-T1-GE3 is housed in an 8-TSSOP package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 9.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.08W (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 5 V |