SI6473DQ-T1-E3
MOSFET P-CH 20V 6.2A 8TSSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel Power MOSFET, part number SI6473DQ-T1-E3, offers a 20V drain-source breakdown voltage and a continuous drain current capability of 6.2A at 25°C ambient. This device features a low on-resistance of 12.5mOhm maximum at 9.5A and 4.5V Vgs, optimized for efficient power switching. Designed with a P-Channel enhancement mode, it operates with gate-source voltages ranging from ±8V maximum, and a threshold voltage of 450mV minimum at 250µA. The MOSFET exhibits a gate charge of 70nC maximum at 5V Vgs. Packaged in an 8-TSSOP for surface mounting, it supports a maximum power dissipation of 1.08W at 25°C ambient and operates within a temperature range of -55°C to 150°C. This component is suitable for applications in battery management, power supplies, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 9.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.08W (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 5 V |