SI6467BDQ-T1-GE3
MOSFET P-CH 12V 6.8A 8TSSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI6467BDQ-T1-GE3, is a power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 12V and a continuous Drain current (Id) of 6.8A at 25°C (Ta). The low on-resistance of 12.5mOhm is achieved at 8A and 4.5V Vgs, indicating efficient power transfer. With a typical gate charge (Qg) of 70 nC at 4.5V, it facilitates fast switching characteristics. The P-Channel MOSFET is housed in an 8-TSSOP package, suitable for surface mounting. Key parameters include a Vgs(th) of 850mV at 450µA. This component finds utility in power management solutions across various industries requiring efficient switching and low on-state losses.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 8A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 850mV @ 450µA |
| Supplier Device Package | 8-TSSOP |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 4.5 V |
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