SI6467BDQ-T1-E3
MOSFET P-CH 12V 6.8A 8-TSSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel Power MOSFET, part number SI6467BDQ-T1-E3, offers a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 6.8A at 25°C (Ta). This device features a low on-resistance of 12.5mOhm maximum at 8A and 4.5V Vgs. The gate charge (Qg) is specified at 70 nC maximum at 4.5V Vgs. The SI6467BDQ-T1-E3 utilizes a P-Channel MOSFET technology and is housed in an 8-TSSOP surface mount package. Its threshold voltage (Vgs(th)) is 850mV maximum at 450µA. This component is commonly found in applications such as power management, battery charging, and load switching within the consumer electronics and industrial sectors. The device is supplied in Cut Tape (CT) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 8A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 850mV @ 450µA |
| Supplier Device Package | 8-TSSOP |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 4.5 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
