SI6466ADQ-T1-E3
MOSFET N-CH 20V 6.8A 8TSSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI6466ADQ-T1-E3 is an N-Channel TrenchFET® power MOSFET. This component features a 20 V drain-source voltage (Vdss) and a continuous drain current (Id) of 6.8 A at 25°C (Ta), with a maximum power dissipation of 1.05 W (Ta). Optimized for low on-resistance, it achieves 14 mOhm maximum at 8.1 A and 4.5 Vgs. The device operates with gate drive voltages from 2.5 V to 4.5 V and has a maximum gate charge of 27 nC at 5 Vgs. With a threshold voltage (Vgs(th)) of 450 mV minimum at 250 µA, it is suitable for applications requiring efficient switching. The SI6466ADQ-T1-E3 is housed in an 8-TSSOP package, designed for surface mounting, and rated for an operating temperature range of -55°C to 150°C (TJ). This component finds application in power management, consumer electronics, and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 8.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.05W (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V |