SI6465DQ-T1-E3
MOSFET P-CH 8V 8.8A 8TSSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI6465DQ-T1-E3, features a 8V drain-source voltage (Vdss) and 8.8A continuous drain current at 25°C. This surface-mount device is housed in an 8-TSSOP package, offering a maximum power dissipation of 1.5W. The Rds On is specified at a maximum of 12mOhm at 8.8A and 4.5V Vgs. Drive voltages for optimal performance range from 1.8V to 4.5V. The gate charge (Qg) is 80nC at 4.5V Vgs. Operating temperature range is -55°C to 150°C. This component is suitable for applications in consumer electronics and power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 8.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 4.5 V |
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